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| HYB 514265 BJ/BJL -40/-45/-50 256k x 16 - Bit EDO-Dynamic RAM INFORMATION NOTE High Speed 256kx16 DYNAMIC MEMORIES CHARACTERISATION DATA 3.97 INFOCD1.DOC This information note is intended to provide technical information on the SIEMENS HYB514265BJ/BJL high speed 256kx16 DYNAMIC ACCESS MEMORIES (16M Cutdown) with EDO capability, operating from 5V power supply. CHARACTERISTICS OF DC - PARAMETERS The SIEMENS HYB514265BJ/BJL high speed 256kx16 wordwide DRAM devices are guarantied to meet certain DC parametric limits over the temperature range 0o to 70oC. This information note shows the actual performance levels that can typically be expected from devices. Samples with speed grade -40 out of three different production lots have been randomly selected and characterised. Typical values of operation currents as a function of cycle time are shown in figure 1 and figure 2. Other DC - parameters measured at room temperature and with two voltages ( VCC = 4.5 V and 5.5 V) are shown in table 1. CHARACTERISTICS OF AC - PARAMETERS All AC - parameters measured at two voltages ( VCC = 4.5 V and 5.5 V) and two temperatures (+85oC and - 10oC) are put together in table 2. All measurements shown in this information note have been performed on an ADVANTEST 5381 dedicated memory test system. 2 Operation Current versus Cycle Time 160 140 120 ICCx [mA] 100 80 60 40 20 0 60 70 80 90 100 tRC [ns] 110 120 130 140 ICC1 ICC3 ICC6 Spec fig.1 Hyper Page Mode Current ICC4 versus Cycle Time 100 90 80 70 ICC4 [mA] 60 50 40 30 20 10 0 15 20 tHPC [ns] 25 30 5,5V@RT Spec fig.2 3 Table 1: DC CHARACTERISTICS Device: 256k x 16 EDO-DRAM 40ns, 5V power supply version Parameter Standby Current TTL Standby Current CMOS Spec -40ns ICC2 ICC5 max. 2 mA 1 mA Measurement Vcc = 4.5V 350 uA 300 uA Ta=RT Vcc = 5.5V 450 uA 350 uA 4 Table 2: AC CHARACTERISTICS Device: 256k x 16 EDO-DRAM 40ns, 5V power supply version Parameter Spec -40ns Measurement Unit [ns] min. max. (tT = 2ns) Ta = -10C Ta = +85C note Vcc = 4.5V Vcc = 5.5V Vcc = 4.5V Vcc = 5.5V 1) Common Parameters trc trp tras tcas tasr trah tasc tcah trcd (min) trcd (max) trad trsh tcsh tcrp 69 25 40 6 0 5 0 5 9 7 6 32 5 10000 10000 30 20 54 19 22 3 -4 3 -4 2 2 25 5 2 23 0 54 19 22 3 -4 2 -4 2 3 24 4 2 23 0 66 25 <10 4 -5 3 -4 2 4 30 5 3 24 0 67 25 <10 2) 4 3) -5 3 -4 2 4 30 4) 5 3 24 0 Read Cycle Unit [ns] min. trac tcac taa toea tral trcs trch trrh tclz toff toez 20 0 0 0 0 0 0 max. 40 10 17 10 Ta = -10C Ta = +85C Vcc = 4.5V Vcc = 5.5V Vcc = 4.5V Vcc = 5.5V 30 29 36 36 7 7 9 10 12 12 15 15 4 4 5 5 4 4 5 5 -2 -2 -3 -3 -4 -4 -5 -5 -3 -3 -4 -4 3 3 4 4 10 6 6 8 8 10 6 4 7 5 Write Cycle Unit [ns] min. twch twp twcs trwl tcwl tds tdh 5 5 0 10 10 0 5 max. Ta = -10C Ta = +85C Vcc = 4.5V Vcc = 5.5V Vcc = 4.5V Vcc = 5.5V 0 0 0 0 1 1 1 1 -3 -3 -3 -3 2 2 2 2 3 3 3 3 -4 -4 -4 -4 2 2 3 3 5 Read-Modify-Write Cycle Unit [ns] min. trwc trwd tcwd tawd 93 52 22 32 max. Ta = -10C Ta = +85C Vcc = 4.5V Vcc = 5.5V Vcc = 4.5V Vcc = 5.5V 81 81 87 89 39 39 44 44 14 14 15 15 21 21 24 24 CAS-before-RAS refresh cycle Unit [ns] min. tcsr tchr 5 5 max. Ta = -10C Ta = +85C Vcc = 4.5V Vcc = 5.5V Vcc = 4.5V Vcc = 5.5V -3 -3 -3 -3 -1 -1 -1 -1 Hyper Page Mode -- EDO cycle Unit [ns] min. thpc tcac(RTR) tcp tcpa tcoh tras 15 10 8 3 40 Ta = -10C Ta = +85C max. Vcc = 4.5V Vcc = 5.5V Vcc = 4.5V Vcc = 5.5V 11 11 12 13 7 7 9 10 1 1 1 1 21 14 14 17 182 3 3 3 3 200000 21 21 <10 <10 Hyper Page Mode- EDO Read-modify-Write Cycle Unit [ns] min. tprwc 55 max. Ta = -10C Ta = +85C Vcc = 4.5V Vcc = 5.5V Vcc = 4.5V Vcc = 5.5V 35 35 38 38 CAS-before-RAS counter test cycle Unit [ns] min. tcpt 25 max. Ta = -10C Ta = +85C Vcc = 4.5V Vcc = 5.5V Vcc = 4.5V Vcc = 5.5V 0 1 1 1 Notes: 1) all AC-parameters are measured with 0.8V/2.4V levels on clocks and addresses 2) the "min."-value is shown 3) tcas(min)-value in a write cycle is shown 4) trcd(max.) is the reference point where the access time is controlled by tcac 6 |
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